Ion Implantation and Annealing of Oxides

Silicon Quantum Dots Grown by Ion Implantation and Annealing

High mobility annealing of Transparent Conductive Oxides

To improve electrical properties a high temperature annealing treatment was applied to several transparent conductive oxides (TCO), namely tin doped indium oxide (ITO), Gaor Aldoped ZnO (ZnO:Al/Ga), ion beam assisted deposited (IBAD) ZnO:Ga and Ga doped zinc magnesium oxide (ZnMgO:Ga). All these films were grown by magnetron sputtering. During the annealing process all TCO films were capped wit...

Effects of H+ ion implantation and annealing on the properties of CuIn0.75Ga0.25Se2 thin films

Fabrication of Si1−xGex Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing

In our contribution we present the fabrication of Si1−xGex alloy by ion-implantation and millisecond ash lamp annealing. The 100 keV Ge ions at the uence of 10 × 10, 5 × 10, and 3 × 10 cm−2 were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted la...

Optical absorption measurements of silica containing Si nanocrystals produced by ion implantation and thermal annealing

Optical absorption spectra from silicon-implanted silica slides are shown to contain features due to optical interference. These features, which result from the modified refractive index profile produced by the implant, can readily lead to misinterpretation of absorption spectra. To demonstrate the importance of such effects, silica samples were implanted with 80, 400, and 600 keV Si ions to fl...